两个基于2,5-二甲氧基对苯二甲酸和咪唑衍生物的超分子钴配位聚合物的结构及光催化反应

本文以咪唑衍生物为配体,通过水热合成法与钴离子制备出两个配位聚合物:{[Co(DTA)(1,4-DIB)(H₂O)]·H₂O}_n(1)和[Co(DTA)(1,3-BMIB)]_n(2)(1,4-DIB=1,4-二(1H-咪唑-1-基)苯; 1,3-BMIB=1,3-二(4-甲基-1H-咪唑-1-基)苯;H₂DTA=2,5-二甲氧基对苯二甲酸)。利用X射线单晶衍射、粉末衍射、热失重、元素分析、红外光谱以及固体紫外-可见光谱等对两个配合物进行了表征。结构分析证实配合物1和2是通过二维结构堆积成的三维超分子化合物。粉末衍射测试则显示两个配合物在水中有很好的稳定性。固体紫外-可见光谱显示两个配合物属半导体材料,对紫外-可见光有很强的吸收作用。在光催化实验中,配合物1和2可加快亚甲基蓝的降解速度。     

用于细胞成像的双氰基二苯代乙烯衍生物双光子荧光银离子探针

双光子荧光显微成像兼具诸如近红外激发、暗场成像、避免荧光漂白和光致毒、定靶激发、高横向分辨率与纵向分辨率、降低生物组织吸光系数及降低组织自发荧光干扰等特点,显著地优于单光子荧光显微成像,为生命科学研究提供了更为便利的工具.因此双光子荧光探针适合于生物检测与成像.制备了衍生于二苯代乙烯的双光子荧光银离子探针,此探针以拥有异常大的双光子吸收截面(6TPA)的4-甲基-2,5-二氰基-4'-氨基二苯乙烯(DCS)作为双光子荧光母体,以6-芳基-3,9-二硫-6-氮杂癸烷(TAU)为Ag+配体.探针显示了大的δTPA(在MeCN中,950 GM)、对银离子有高的灵敏性与选择性、强的双光子荧光(790 nm激光激发时).探针的络合常数为IgK=5.76±0.05.探针能选择性地检测和成像活细胞中的游离Ag+,可用于细胞中微量Ag+的分析检测与成像.此探针为开发理想的双光子荧光探针提供了可供借鉴的平台.     

Oxidation of aromatic sulfides with molecular oxygen: Controllable synthesis of sulfoxides or sulfones

The recent development of selective oxidation of aromatic sulfides with molecular oxygen was highlighted. The sulfoxides and sulfones could be obtained by simply switching the reaction media, i.e., bis(2-butoxyethyl)ether (BBE) or poly(ethylene glycol)dimethyl ether (PEGDME). The application of the high-boiling-point polyether as an initiator and green media can eliminate the need of large quantities of additives and volatile solvents. This strategy represents an economic and eco-friendly method that could find potential applications.     

层次分析法在步枪作战效能评估中的应用

应用层次分析法对两代(共10种)突击步枪和自动步枪作战效能的评估和排序进行了讨论,并对其作战效能和技术水平进行了判断.所得结论对了解我军装备的先进程度,适应新时期军事科学和战备具有特别重要的意义.     

一类非平稳高斯序列超过数点过程与和的渐近性

设{X_i}_(i=1)~∞是标准化非平稳高斯序列,N_n为X_1,X_2,…,X_n依次对水平μ_(n1),μ_(n2),…,μ_(nn)的超过数形成的点过程.记Υ_(ij)=X_iX_j,S_n=■X_i.当Υ_(ij)满足一定条件时,证明了N_n依分布收敛到Poisson过程,且N_n与S_n渐近独立.     

Structural,optical and electrical properties of undoped and Si-doped AlxGa1−xN thin films on Si (1 1 1) substrate grown by PA-MBE

We have studied the structural properties of undoped and Si-doped Al_xGa_1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the Al_xGa_1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A₁(LO) and E₂(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (Φ_B) of undoped and Si-doped Al_xGa_1?xN samples was found to be 0.86 and 0.74 eV, respectively.     

新型喹喔啉-三苯胺衍生物的合成及其对Fe3+的识别性能

以4,4-二溴苯偶酰为原料,经过两步反应得到一种新的喹喔啉-三苯胺衍生物4',4''-（6-溴喹喔啉-2,3-二基）双（N,N-二苯基-[1,1'-联苯] -4-胺）（TP1）。通过¹H NMR、¹³C NMR和HR-MS对其结构进行了表征,并利用紫外-可见吸收光谱和荧光光谱研究了衍生物对Fe³⁺的识别性能。光谱测试结果表明：衍生物溶液与Fe³⁺作用后,296nm处的吸光度出现明显变化,说明TP1能选择性识别Fe³⁺;当Fe³⁺浓度为4～200μmol/L时,TP1吸光度与Fe³⁺浓度呈现良好的线性回归关系(R²=0.9977)。      

Heteroepitaxial growth of thin InAs layers on GaAs(1 0 0) misoriented substrates: A structural and morphological comparison

Thin InAs epilayers were grown on GaAs(1 0 0) substrates exactly oriented and misoriented toward [1 1 1]A direction by atmospheric pressure metalorganic vapor phase epitaxy. InAs growth was monitored by in situ spectral reflectivity. Structural quality of InAs layers were studied by using high-resolution X-ray diffraction. No crystallographic tilting of the layers with respect to any kind of these substrates was found for all thicknesses. This result is discussed in terms of In-rich growth environment. InAs layers grown on 2° misoriented substrate provide an improved crystalline quality. Surface roughness of InAs layers depend on layer thickness and substrate misorientation.     

Debye屏蔽势下的Na原子

结合自由Na原子的l-依赖模型势, 采用B-样条基组展开方法计算了等离子体环境中Na原子的的基态能量、振子强度、偶极极化率、四极极化率、八极极化率等随Debye长度的变化. 其中原子的等离子体效应采用Debye屏蔽模型. 计算结果与其他研究者的结果符合得很好; 在Debye屏蔽等离子体环境下下基态能量的结果与Sahoo [Sahoo S Ho Y K 2006 Phys. Plasmas 13, 063301]和Li [Li H W and Kar S, 2012 Phys. Plasmas 19, 073303]用其他模型所得的结果基本一致; 电偶极、四极和八极极化率随Debye长度的变化趋势一致, 数值结果和Li和Kar [Li H W and Kar S, 2012 Phys. Plasmas 19, 073303] 的数量级一致.